30N60 Datasheet | Specifications & PDF Download

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH30N60B3 VCES = 600V IC110 = 30A V CE(sat)  1.85V tfi(ty

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Preliminary Technical Information XPTTM 600V IGBT GenX3TM (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXQ30

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Features n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching

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IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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IGW30N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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www.DataSheet4U.com HiPerFAST with Diode TM IGBT C2-Class High Speed IGBTs IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ = 600 V = 70

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IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Contr

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit rugg

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GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (R

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Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(

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FMP30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1

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NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.8 Die Size 6.6 x 6.6 mm2 See page 2

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