Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N6.
IXYS
30N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
Infineon
G30T60 - IGW30N60T
IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junctio.
Infineon Technologies
K30T60 - IKW30N60T
IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon
G30N60HS - High Speed IGBT
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D.
TRinno
TGAN30N60FDR - Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
Huajing Microelectronics
BT30N60ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT30N60ANF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offe.
Fuji Electric
FMP30N60S1 - N-Channel enhancement mode power MOSFET
FMP30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.
Fairchild Semiconductor
HGT1N30N60A4D - 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt.
Infineon Technologies
IHW30N60T - IGBT
www.DataSheet4U.com Soft Switching Series IHW30N60T q C Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode Features: • Very low.
Fairchild Semiconductor
30N60B3D - HGTG30N60B3D
Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high vol.
IXYS
IXGT30N60B2D1 - IGBT
Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 V.
Vishay
SiHP30N60E - Power MOSFET
www.vishay.com SiHP30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC.
Vishay
SIHF30N60E - MOSFET
www.vishay.com SiHF30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.
Fairchild Semiconductor
HGTG30N60A4 - N-Channel IGBT
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device com.
IXYS
IXXH30N60C3D1 - 600V IGBTs
XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110.
IXYS
30N60C3 - IGBT
GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (R.
Fairchild Semiconductor
FCP130N60 - MOSFET
FCP130N60 — N-Channel SuperFET® II MOSFET FCP130N60 N-Channel SuperFET® II MOSFET 600 V, 28 A, 130 mΩ September 2014 Features • 650 V @ TJ = 150°C .
Fairchild Semiconductor
FGH30N60LSD - IGBT
FGH30N60LSD — 600 V, 30 A PT IGBT FGH30N60LSD 600 V, 30 A PT IGBT Features • Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A • High Input Impeda.
Fairchild Semiconductor
FCH130N60 - MOSFET
FCH130N60 — N-Channel SuperFET® II MOSFET July 2014 FCH130N60 N-Channel SuperFET® II MOSFET 600 V, 28 A, 130 m Features • 650 V @ TJ = 150°C • Typ.
Vishay
SiHB30N60E - Power MOSFET
www.vishay.com SiHB30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.
