30N60 Datasheet | Specifications & PDF Download

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH30N60B3 VCES = 600V IC110 = 30A V CE(sat)  1.85V tfi(ty

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IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta

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www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channe

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D

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HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt

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HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-st

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Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high vol

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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HiPerFAST TM IGBT IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 70 A = 2.7 V = 3

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Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 V

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VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbo

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HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit rugg

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