30N60 Datasheet | Specifications & PDF Download

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

Rating: 1 ★ (8 votes)

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf

Rating: 1 ★ (8 votes)

High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability VCES ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Symbol VCES VCG

Rating: 1 ★ (6 votes)

www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt

Rating: 1 ★ (6 votes)

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

Rating: 1 ★ (5 votes)

IGB30N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Ju

Rating: 1 ★ (5 votes)

Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0

Rating: 1 ★ (5 votes)

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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Rating: 1 ★ (5 votes)

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Rating: 1 ★ (5 votes)

IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

Rating: 1 ★ (5 votes)

IGBT High speed IGBT in Trench and Fieldstop technology IGP30N60H3 600V high speed switching series third generation Data sheet Industrial Power Contr

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Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V ·100% a

Rating: 1 ★ (5 votes)

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provide

Rating: 1 ★ (5 votes)

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device c

Rating: 1 ★ (5 votes)

HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device com

Rating: 1 ★ (4 votes)