IXFH30N60Q Description
+150 300 W °C °C °C °C 1.13/10 Nm/lb.in. 6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. TVeGSmp=e0raVtu, rIeD = 250µA Coefficient VDS = VGS, ID = 4 mA Tem.
- Part: IXFH30N60Q
- Manufacturer: IXYS
- Size: 581.72 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXFH30N60X | N-Channel MOSFET |