Overview: X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 600 V V 30 V 40 V 30 A 60 A 10 A 1J 50 V/ns 500 W -55 ... +150 150
-55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 600 V 2.5 4.
