IXFH30N60X Datasheet | IXYS

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 600 30 V 40 V 30 A 60 A 10 A 1J 50 V/ns 500...