IXFH30N60X Datasheet and Specifications PDF

The IXFH30N60X is a Power MOSFET.

Key Specifications

PackageTO-247-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Min Operating Temp-55 °C

IXFH30N60X Datasheet

IXFH30N60X Datasheet (IXYS)

IXYS

IXFH30N60X Datasheet Preview

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic .


* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* PFC Circuits
* AC and DC Motor Drives
* Robotics and Serv.

IXFH30N60X Datasheet (Inchange Semiconductor)

Inchange Semiconductor

IXFH30N60X Datasheet Preview

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot va.


*Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V
*Fully characterized avalanche voltage and current
*100% Avalanche Tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*Switched mode power supplies
*DC-DC converters
*ABSOLUTE MAXIMUM .

Price & Availability

Seller Inventory Price Breaks Buy
TME 0 1+ : 8.13 USD
3+ : 7.31 USD
10+ : 6.46 USD
30+ : 5.8 USD
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TME 0 1+ : 8.13 EUR
3+ : 7.31 EUR
10+ : 6.46 EUR
30+ : 5.8 EUR
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Microchip USA 278 50+ : 27.4970376 USD
100+ : 27.4121702 USD
1000+ : 27.3273028 USD
10000+ : 27.2424354 USD
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