IXFH30N60P Description
Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr .. 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXFH30N60P Key Features
- easy to drive and to protect
- Amperes
- Amperes