Overview: Advance Technical Information PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr www.DataSheet4U.com 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 30 80 30 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns PLUS220 (IXFV) G D S D (TAB) PLUS220 (IXFV...S) G S D (TAB) TO-247 (IXFH) W °C °C °C °C °C
G D D (TAB) S 1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque TO-247 TO-268 PLUS220 (TO-247) 300 260 1.13/10 Nm/lb.in. 6 5 4 g g g TO-268 (IXFT) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.5 5.0 ±100 25 250 240 V V nA µA µA mΩ
G = Gate S = Source G S D = Drain TAB = Drain D (TAB) VGS = 10 V, ID = 0.
