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CPC3703C - 250V N-Channel Depletion-Mode FET

Download the CPC3703C datasheet PDF. This datasheet also covers the CPC3703 variant, as both devices belong to the same 250v n-channel depletion-mode fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • High Breakdown Voltage: 250V.
  • Low On-Resistance: 4 max. at 25ºC.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • High Input Impedance.
  • Small Package Size: SOT-89.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3703-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3703CTR 250V N-Channel Depletion-Mode FET
CPC3703 250V N-Channel Depletion-Mode FET
CPC3701 N-Channel MOSFET
CPC3701C N-Channel MOSFET
CPC3701CTR N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250V RDS(on) (max) 4 IDSS (min) 360mA Package SOT-89 Features • High Breakdown Voltage: 250V • Low On-Resistance: 4 max. at 25ºC • Low VGS(off) Voltage: -1.6 to -3.9V • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D G D S (SOT-89) CPC3703 250V N-Channel Depletion-Mode FET Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.