INTEGRATED CIRCUITS DIVISION
• Low RDS(on) at Cold Temperatures
• RDS(on) 35 max. at 25ºC
• High Input Impedance
• High Breakdown Voltage: 350VP
• Low VGS(off) Voltage: -1.6 to -3.9V
• Small Package Size: SOT-89
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Power Supply
The CPC3730 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3730 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730 offers a low, 35 maximum, on-state
resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage
of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)