CPC3730C Datasheet | IXYS

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140m A Package SOT-89 Features - Low RDS(on) at Cold Temperatures - RDS(on) 35 max. at 25ºC - High Input Impedance - High Breakdown Voltage: 350VP - Low VGS(off) Voltage: -1.6 to -3.9V - Small Package Size: SOT-89 Applications - Ignition Modules - Normally-On Switches - Solid State Relays - Converters - Telemunications - Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3730 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telemunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730 offers a low, 35 maximum, on-state resistance at 25ºC. The CPC3730 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3730CTR Description...