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CPC3902 - N-Channel MOSFET

General Description

The CPC3902 is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process.

Key Features

  • High Breakdown Voltage: 250V.
  • On-Resistance: 2.5 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 250V RDS(on) (max) 2.5 IDSS (min) 400mA Package SOT-223 Features • High Breakdown Voltage: 250V • On-Resistance: 2.5 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Current Regulator • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D 4 123 GDS CPC3902 250V N-Channel Depletion-Mode FET Description The CPC3902 is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process.