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CPC3902ZTR - N-Channel MOSFET

Download the CPC3902ZTR datasheet PDF. This datasheet also covers the CPC3902 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3902 is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process.

Key Features

  • High Breakdown Voltage: 250V.
  • On-Resistance: 2.5 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3902-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3902Z N-Channel MOSFET
CPC3902 N-Channel MOSFET
CPC3909 N-Channel MOSFET
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CPC3909ZTR N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 250V RDS(on) (max) 2.5 IDSS (min) 400mA Package SOT-223 Features • High Breakdown Voltage: 250V • On-Resistance: 2.5 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Current Regulator • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D 4 123 GDS CPC3902 250V N-Channel Depletion-Mode FET Description The CPC3902 is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process.