CPC3960 Key Features
- High Breakdown Voltage: 600V
- On-Resistance: 44 max. at 25ºC
- Low VGS(off) Voltage: -1.4 to -3.1V
- High Input Impedance
- Small Package Size: SOT-223
- Part: CPC3960
- Manufacturer: IXYS (official site)
- Size: 120.08 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| CPC3960ZTR | N-Channel MOSFET |
| CPC3902 | N-Channel MOSFET |
| CPC3902Z | N-Channel MOSFET |
| CPC3902ZTR | N-Channel MOSFET |
| CPC3909 | N-Channel MOSFET |
CPC3960 Description
The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced...