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IXYS

DGSK8-025A Datasheet Preview

DGSK8-025A Datasheet

Gallium Arsenide Schottky Rectifier

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DGS 4-025A DGS 3-025AS
DGSK 8-025A
Gallium Arsenide Schottky Rectifier
IFAV
= 5.4 A
VRRM = 250 V
CJunction = 6.4 pF
Type
DGS 3-025AS
DGS 4-025A
DGSK 8-025A
Marking on product
3A250AS
DGS 4-025A
Single
Single
Circuit
A
C
A
C
Package
A = Anode, C = Cathode , TAB = Cathode
TO-252 AA
A
C (TAB)
A
TO-220 AC C
A
C (TAB)
DGSK 8-025A
Common cathode
TO-220 AB A
C
A
A
C
A
C (TAB)
Symbol
VRRM/RSM
IFAV
IFAV
IFSM
TVJ
Tstg
Ptot
Md
Conditions
TC = 25°C; DC
TC = 90°C; DC
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TC = 25°C
mounting torque (TO-220)
Maximum Ratings
250
V
5.4
A
3.9
A
10
A
-55...+175
°C
-55...+150
°C
18
W
0.4...0.6
Nm
Symbol
IR
VF
CJ
RthJC
RthCH
Weight
Conditions
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
IF = 2 A;
IF = 2 A;
TVJ = 125°C
TVJ = 25°C
VR = 100 V; TVJ = 125°C
TO-220
TO-252
TO-220
Characteristic Values
typ. max.
0.7
mA
0.7
mA
1.3
V
1.3
1.6
V
6.4
pF
8.5 K/W
0.5
K/W
0.3
g
2
g
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Features
• Low forward voltage
• Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
• Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies
(SMPs)
• Small size SMPs
• High frequency converters
• Resonant converters
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-2




IXYS

DGSK8-025A Datasheet Preview

DGSK8-025A Datasheet

Gallium Arsenide Schottky Rectifier

No Preview Available !

10
A
1
IF
0,1
0,01
TVJ =
125°C
25°C
100
pF
CJ
10
DGS 4-025A DGS 3-025AS
DGSK 8-025A
Outline TO-220
TVJ = 125°C
0,001
0,0 0,5 1,0 1,5 V 2,0
VF
Fig. 1 typ. forward characteristics
10
K/W
1
ZthJC
0,1
0,01
Single Pulse
1
0,1
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
Outlines TO-252
0,00001
0,0001
0,001
0,01
0,1
Fig. 3 typ. thermal impedance junction to case
DGS3-025AS
1 s 10
t
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1 Anode
2 NC
3 Anode
4 Cathode
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
2-2


Part Number DGSK8-025A
Description Gallium Arsenide Schottky Rectifier
Maker IXYS
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