IXD75IF650NA - XPT IGBT

Datasheet Details

/ Advantages:.
Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

📁 IXD75IF650NA Similar Datasheet

IXD604 - 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers (Clare)
IXDA20N120AS - High Voltage IGBT (IXYS Corporation)
IXDD404 - 4 Amp Dual Low-Side Ultrafast MOSFET Driver (IXYS Corporation)
IXDD404PI - 4 Amp Dual Low-Side Ultrafast MOSFET Driver (IXYS Corporation)
IXDD404SI - 4 Amp Dual Low-Side Ultrafast MOSFET Driver (IXYS Corporation)
IXDD404SI-16 - 4 Amp Dual Low-Side Ultrafast MOSFET Driver (IXYS Corporation)
IXDD404SIA - 4 Amp Dual Low-Side Ultrafast MOSFET Driver (IXYS Corporation)
IXDD408CI - 8 Amp Low-Side Ultrafast MOSFET Driver (IXYS Corporation)

Other Datasheets by IXYS

Published: Aug 15, 2016 |