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IXDT30N120D1 Datasheet, IXYS

IXDT30N120D1 igbt equivalent, high voltage igbt.

IXDT30N120D1 Avg. rating / M : 1.0 rating-114

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IXDT30N120D1 Datasheet

Features and benefits

q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficie.

Application

q Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C T.

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IXDT30N120D1 Page 1 IXDT30N120D1 Page 2 IXDT30N120D1 Page 3

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