IXDT30N120D1 Datasheet | IXYS

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V TO-247 AD (IXDH) E IXDH 30N120 IXDT 30N120 E IXDH 30N120 D1 IXDT 30N120 D1 C (TAB) TO--268 AA (IXDT) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA t SC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 k W Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 60 38 76 ICM = 50 VCEK < VCES 10 300 135 -55 ... +150 -55 ... +150 300 V V V V A A A A µs W W °C °C °C q q G E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Features q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space savings High power density IXDT: surface mountable high power package 1.1/10 Nm/lb.in. 6 g q Typical Applications q Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 2.5 6.5 V V q q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 1 m A, VCE = VGE VCE = VCES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 1.5 m A m A ± 500 n A VCE = 0 V, VGE = ± 20 V IC = 30 A, VGE = 15 V 2.4 © 2000 IXYS All rights reserved 1-4 Free Datasheet http://../ IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol...