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HiPerFETTM Power MOSFETs Q-Class
IXFH 21N50Q IXFT 21N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25 RDS(on)
= 500 V = 21 A = 0.25 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
500 V 500 V
±30 V ±40 V
21 A 84 A 21 A
30 mJ 1.5 mJ
15 V/ns
280 W
-55 to +150 150
-55 to +150
°C °C °C
300 °C
1.13/10 Nm/lb.in.
IXFH21N50Q Datasheet
