IXFH30N60P
IXFH30N60P is Power MOSFET manufactured by IXYS.
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
..
600 V 30 A 240 mΩ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 30 80 30 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
PLUS220...
