* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect DS99316(06/05) © 2005 IXYS All rights reserved IXFH 30N60P IXFV 30N60P IXFV 30N60PS IXFT 30N60P Symbol Test Conditions Characteristic Values (
IXFH30N60P Datasheet (246.49 KB)
IXFH30N60P
IXYS
246.49 KB
Power mosfet.
Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P.
📁 Related Datasheet
IXFH30N60Q Power MOSFET (IXYS)
IXFH30N60X Power MOSFET (IXYS)
IXFH30N60X N-Channel MOSFET (INCHANGE)
IXFH30N40Q Power MOSFET (IXYS)
IXFH30N50 HiPerFET Power MOSFETs (IXYS)
IXFH30N50 Power MOSFET (IXYS)
IXFH30N50P Power MOSFET (IXYS)
IXFH30N50Q3 Power MOSFET (IXYS Corporation)
IXFH30N85X Power MOSFET (IXYS)
IXFH30N85X N-Channel MOSFET (INCHANGE)
