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IXFH30N60P - Power MOSFET

Key Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect DS99316(06/05) © 2005 IXYS All rights reserved IXFH 30N60P IXFV 30N60P IXFV 30N60PS IXFT 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 15 27 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 42 29 VGS = 10 V, VDS = 0.5 ID25 RG = 4 Ω (External) 20 80 25 145 VGS = 10 V, VDS = 0.5 VDSS, ID =.

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr www.DataSheet4U.com 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 30 80 30 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns PLUS220 (IXFV) G D S D (TAB) PLUS220 (IXFV...