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IXFH30N60X Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFH30N60X datasheet PDF. This datasheet also includes the IXFT30N60X variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFT30N60X-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 600 V V 30 V 40 V 30 A 60 A 10 A 1J 50 V/ns 500 W -55 ...

+150 150 -55 ...

+150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📁 Similar Datasheet

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INCHANGE Logo IXFH30N60X N-Channel MOSFET INCHANGE

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