IXFK200N10P

The IXFK200N10P is Polar HiPerFET Power MOSFET designed by IXYS.

Product Overview

IXYS

Part number	IXFK200N10P, IXFX200N10P
Manufacturer	IXYS
File Size	132.03 KB
Description	Polar HiPerFET Power MOSFET
Datasheet	IXFX200N10P_IXYS.pdf
Note	This datasheet PDF includes multiple part numbers: IXFK200N10P, IXFX200N10P. Please refer to the document for exact specifications by model.
Additional preview pages of the IXFK200N10P datasheet.

z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60.

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Published: Jun 6, 2010 |