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IXFK210N17T - GigaMOS Power MOSFET

Download the IXFK210N17T datasheet PDF. This datasheet also covers the IXFX210N17T variant, as both devices belong to the same gigamos power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX210N17T_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK21N100F Power MOSFET IXYS Corporation
IXFK20N120 HiPerFET Power MOSFETs IXYS Corporation
IXFK20N120P Power MOSFET IXYS Corporation
IXFK20N80Q Power MOSFET IXYS Corporation
IXFK220N15P Polar Power MOSFET HiperFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK210N17T GigaMOS Power MOSFET
IXFK21N100Q HiPerFET Power MOSFET
IXFK200N10P Polar HiPerFET Power MOSFET
IXFK230N20T GigaMOS Power MOSFET
IXFK230N20T GigaMOS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17T IXFX210N17T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 210A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 210 160 580 100 2 1150 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb.