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IXFK200N10P - Polar HiPerFET Power MOSFET

This page provides the datasheet information for the IXFK200N10P, a member of the IXFX200N10P Polar HiPerFET Power MOSFET family.

Features

  • z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60.

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Datasheet Details

Part number IXFK200N10P
Manufacturer IXYS
File Size 132.03 KB
Description Polar HiPerFET Power MOSFET
Datasheet download datasheet IXFK200N10P Datasheet
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Full PDF Text Transcription

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Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 200 100 400 60 100 4 10 800 -55 ... +175 175 -55 ...
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