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IXFK66N50Q2 - Power MOSFET

Download the IXFK66N50Q2 datasheet PDF. This datasheet also covers the IXFX66N50Q2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Double metal process for low gate resistance.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Avalanche energy and current rated.
  • Fast intrinsic Rectifier Advantages.
  • Easy to mount.
  • Space savings.
  • High power density © 2008 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX66N50Q2_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFK66N50Q2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFK66N50Q2. For precise diagrams, and layout, please refer to the original PDF.

HiPerFETTM Power MOSFETs Q2-Class IXFK66N50Q2 IXFX66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS V...

View more extracted text
, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 PLUS247 Maximum Ratings 500 V 500 V ± 30 V ± 40 V 66 A 264 A 66 A 4 J 20 V/ns 735 W -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 °C °C °C °C °C Nm/lb.in. N/lb.

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