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IXFN180N25T Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

Preliminary Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN180N25T VDSS = ID25 = RDS(on)  trr  250V 168A 12.9m 200ns miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 250 V 250 V 20 V 30 V 168 A 500 A 90 A 5 J 20 V/ns 900 W -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 90A, Note 1 Characteristic Values Min.

Key Features

  • International Standard Package.
  • miniBLOC, with Aluminium Nitride Isolation.
  • Isolation voltage 2500 V~.
  • High Current Handling Capability.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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