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IXFN180N20 - Power MOSFETs Single Die MOSFET

Key Features

  • International standard packages.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C IXFN 180N20 D VDSS ID25 RDS(on) trr = 200 V = 180 A = 10 mW < 250 ns S Maximum Ratings 200 200 ±20 ±30 180 100 720 36 64 4 5 700 -55 ... +150 150 -55 ...