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IXFN180N07 - HiPerFET Power MOSFETs

Download the IXFN180N07 datasheet PDF. This datasheet also covers the IXFN200N06 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • miniBLOC with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN200N06_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN180N10 Power MOSFET ETC
IXFN100N10S1 HiPerFET Power MOSFETs IXYS Corporation
IXFN100N10S2 HiPerFET Power MOSFETs IXYS Corporation
IXFN100N10S3 HiPerFET Power MOSFETs IXYS Corporation
IXFN100N20 HiPerFET Power MOSFETs IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFN180N15P PolarHT HiPerFET Power MOSFET
IXFN180N20 Power MOSFETs Single Die MOSFET
IXFN180N25T Power MOSFET
IXFN100N65X2 Power MOSFET
IXFN110N85X Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V ID25 200 A 180 A 200 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C; Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C 200N06/200N07 180N07 N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 200 180 100 600 100 30 2 5 520 -55 ... +150 150 -55 ...