* z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount
IXFN200N10P Datasheet (132.03 KB)
IXFN200N10P
IXYS
132.03 KB
Polar hiperfet power mosfet.
Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P .
📁 Related Datasheet
IXFN200N06 HiPerFET Power MOSFETs (IXYS)
IXFN200N07 HiPerFET Power MOSFETs (IXYS)
IXFN20N120 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN21N100Q Power MOSFET (IXYS)
IXFN220N20X3 Power MOSFET (IXYS)
IXFN230N10 Power MOSFET (IXYS Corporation)
IXFN230N20T GigaMOS Power MOSFET (IXYS)
IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET (IXYS Corporation)
IXFN240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
