IXFN50N120SiC Description
SiC Power MOSFET Part number IXFN50N120SiC D (3) G (2) S (1, 4) IXFN50N120SiC ID25 = 47 A VDSS = 1200 V R = DS(on) max 50 mΩ S G S D Backside: isolated.
IXFN50N120SiC Key Features
- High speed switching with low capacitances
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Avalanche ruggedness
- Resistant to latch-up