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IXFN50N120SK - SiC Power MOSFET

Features

  • / Advantages:.
  • High speed switching with low capacitances.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Resistant to latch-up.
  • Real Kelvin source connection G (2) KS (1) S (4).

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Full PDF Text Transcription

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SiC Power MOSFET Kelvin Source gate connection Part number IXFN50N120SK IXFN50N120SK ID25 = 48 A VDSS = 1200 V R = DS(on) max 50 mΩ D (3) KS G S D Backside: isolated E72873 Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Resistant to latch-up • Real Kelvin source connection G (2) KS (1) S (4) Applications: • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating Package: SOT-227B (minibloc) • Isolation Voltage: 2500 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride insolation • Advanced power cycling Disclaimer Notice Information furnished
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