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IXFN50N120SiC - SiC Power MOSFET

Features

  • / Advantages:.
  • High speed switching with low capacitances.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Avalanche ruggedness.
  • Resistant to latch-up.

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SiC Power MOSFET Part number IXFN50N120SiC D (3) G (2) S (1, 4) IXFN50N120SiC ID25 = 47 A VDSS = 1200 V R = DS(on) max 50 mΩ S G S D Backside: isolated E72873 Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up Applications: • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating Package: SOT-227B (minibloc) • Isolation Voltage: 2500 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride isolation • Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable.
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