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IXYS

IXFP8N85XM Datasheet Preview

IXFP8N85XM Datasheet

Power MOSFET

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X-Class HiPERFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXFP8N85XM
D
G
S
VDSS =
ID25 =
RDS(on)
850V
8A
850m
OVERMOLDED
TO-220
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 Hz, 1 Minute
Mounting Torque
Maximum Ratings
850
V
850
V
30
V
40
V
8
A
16
A
4
A
300
mJ
50
V/ns
33
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 4A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.0
5.5 V
100 nA
10 A
750 A
850 m
GDS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100818C(11/19)




IXYS

IXFP8N85XM Datasheet Preview

IXFP8N85XM Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 4A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 4A
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
RG = 10(External)
RthJC
RthCS
Characteristic Values
Min. Typ. Max
2.7
4.5
S
3
654
pF
714
pF
11
pF
40
120
17.0
3.6
10.0
15
25
32
23
0.50
pF
pF
nC
nC
nC
ns
ns
ns
ns
3.78 C/W
C/W
IXFP8N85XM
OVERMOLDED TO-220
(IXFP...M)
oP
123
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 4A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
8A
32 A
1.4 V
125
1.1
18.0
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFP8N85XM
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXFP8N85XM Datasheet PDF





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