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IXFQ30N50P - Power MOSFET

Download the IXFQ30N50P datasheet PDF. This datasheet also covers the IXFH30N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99414E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCs IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH30N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFQ30N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFQ30N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) t...

View more extracted text
30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) trr ≤ 500 V 30 A 200 mΩ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.

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