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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Preliminary Data Sheet
IXFH 30N60Q IXFT 30N60Q
VDSS ID25 RDS(on)
= 600 V = 30 A = 0.23 Ω
trr ≤ 250 ns
Symbol VVDDGSRS VVGGSSM IIDDM25 IAR EAR EAS dv/dt
PD TJ TTJsMtg TL Md Weight
Symbol
VDSS VGS(th)
IGSS IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TTCC
= 25°C = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-247 TO-268
Maximum Ratings
600 V 600 V
±20 V ±30 V
30 A 120 A
30 A
45 mJ 1.5 J
10 V/ns
500
-55 ... +150 150
-55 ... +150
300
W
°C °C °C
°C
1.13/10 Nm/lb.in.
IXFT30N60Q Datasheet
