IXFT30N40Q
IXFT30N40Q is Power MOSFET manufactured by IXYS.
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Hi Per FETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 30N40Q IXFT 30N40Q
VDSS ID25 RDS(on)
= 400 V = 30 A = 0.16 W trr £ 250 ns
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 400 400 ±20 ±30 30 120 30 30 1.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A m J m J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
1.13/10 Nm/lb.in. 6 4 g g
Features l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 400 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 0.16 V V n A m A m A W l l l
VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V l
IXYS advanced low Qg process Low gate charge and capacitances
- easier to drive
- faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification
Advantages l l l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
Easy to mount Space savings High power density
© 2000 IXYS All rights reserved
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