IXFT30N60Q Description
+150 300 W °C °C °C °C 1.13/10 Nm/lb.in. 6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. TVeGSmp=e0raVtu, rIeD = 250µA Coefficient VDS = VGS, ID = 4 mA Tem.
- Part: IXFT30N60Q
- Manufacturer: IXYS (official site)
- Size: 581.72 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFT30N60P | Power MOSFET |
| IXFT30N60X | Power MOSFET |
| IXFT30N40Q | Power MOSFET |
| IXFT30N50 | Power MOSFET |
| IXFT30N50P | Power MOSFET |