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Advanced Technical Information
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances
IXFH 75N10Q IXFT 75N10Q
VDSS ID25
RDS(on)
= 100 V = 75 A = 20 mW
trr £ 200ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
TO-247 AD TO-268
Maximum Ratings 100 V 100 V
±20 V ±30 V
75 A 300 A
75 A
30 mJ 1.5 J
5 V/ns
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
1.13/10 Nm/lb.in.
IXFT75N10Q Datasheet
