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IXYS

IXFV22N50PS Datasheet Preview

IXFV22N50PS Datasheet

PolarHV HiPerFET Power MOSFET

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PolarHVTM HiPerFET
Power MOSFET
Advance Technical Information
www.DataSheet4U.com
IXFH 22N50P
IXFV 22N50P
IXFV 22N50PS
VDSS =
ID25 =
=RDS(on)
500 V
22 A
270 m
N-Channel Enhancement Mode
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque
TO-247
PLUS220 & PLUS220SMD
Maximum Ratings
500 V TO-247 AD (IXFH)
500 V
±30 V
22 A
66 A
22 A
30 mJ
750 mJ PLUS220 (IXFV)
10 V/ns
(TAB)
350
-55 ... +150
150
-55 ... +150
300
260
WG
°C D S
°C
°C PLUS220SMD (IXFV-PS)
°C
°C
D (TAB)
1.13/10 Nm/lb.in.
6g
4g
G
S
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±10 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
270 m
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99358A(03/05)




IXYS

IXFV22N50PS Datasheet Preview

IXFV22N50PS Datasheet

PolarHV HiPerFET Power MOSFET

No Preview Available !

IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
www.DataSheet4U.com
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20
3050
340
40
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 18 (External)
25 ns
27 ns
75 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70 nC
17 nC
40 nC
(TO-247 & PLUS220)
0.35 K/W
0.21 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
typ. Max.
IS VGS = 0 V
ISM Repetitive
22 A
66 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
P
Q
R
S
Millimeter
Min. Max.
4.7 5.3
2.2 2.54
2.2 2.6
1.0 1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
EA
E1 L2 A1
E1
trr IF = 22A, -di/dt = 100 A/µs
QRM VR = 100V
PLUS220SMD (IXFV-PS) Outline
EA
E1 L2 A1
E1
200
1.0
ns
µC
L1
2X e
D
L3
L
3X b
c
A2
D1
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1-Gate 2-Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals: 1-Gate 2-Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFV22N50PS
Description PolarHV HiPerFET Power MOSFET
Maker IXYS
Total Page 5 Pages
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