IXFX230N20T - GigaMOS Power MOSFET
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20T IXFX230N20T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 200V 230A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°
IXFX230N20T Features
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1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
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