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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 32N80P IXFX 32N80P
VDSS ID25
RDS(on) trr
= 800 V
= 32 A
≤ 270 mΩ ≤ 250 ns
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-264) TO-264 PLUS247
Maximum Ratings
800 V 800 V ±30 V ±40 V
32 A 70 A 16 A 50 mJ 2.0 J
10 V/ns
TO-264 (IXFK)
G DS
PLUS247 (IXFX)
(TAB)
830 W
-55 ... +150 150
-55 ... +150
300 260
°C °C °C
°C °C
1.
IXFX32N80P Datasheet
