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IXYS

IXFX32N80P Datasheet Preview

IXFX32N80P Datasheet

Power MOSFET

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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 32N80P
IXFX 32N80P
VDSS
ID25
RDS(on)
trr
= 800 V
= 32 A
270 m
250 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-264)
TO-264
PLUS247
Maximum Ratings
800 V
800 V
±30 V
±40 V
32 A
70 A
16 A
50 mJ
2.0 J
10 V/ns
TO-264 (IXFK)
G
DS
PLUS247 (IXFX)
(TAB)
830 W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
G = Gate
S = Source
Features
D = Drain
Tab = Drain
(TAB)
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
270 m
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99425E(01/06)




IXYS

IXFX32N80P Datasheet Preview

IXFX32N80P Datasheet

Power MOSFET

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
23 38
S
8800
700
26
pF
pF
pF
30 ns
24 ns
85 ns
24 ns
150 nC
40 nC
44 nC
0.15 ° C/W
0.15
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
32 A
70 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V, VGS = 0 V
IRM
250 ns
0.8 µC
6.0 A
IXFK 32N80P
IXFX 32N80P
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
bb12
1.91 2.13
2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045
.075
.115
.055
.084
.123
.024
.819
.620
.031
.840
.635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
5.13
2.89
2.10
1.12
2.39
2.90
1.42
2.69
3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17
6.07
8.38
3.66
6.27
8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000
.000
.010
.010
.800
.090
.820
.102
.125
.239
.330
.144
.247
.342
.150
.070
.170
.090
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2


Part Number IXFX32N80P
Description Power MOSFET
Maker IXYS
Total Page 4 Pages
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