IXFX32N100P - Power MOSFET

IXYS (now Littelfuse)

Download the IXFX32N100P datasheet PDF. This datasheet also covers the IXFK32N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

IXFX32N100P power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFK32N100P-IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFX32N100P
Manufacturer	IXYS (now Littelfuse)
File Size	113.05 KB
Description	Power MOSFET
Datasheet	IXFX32N100P Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXFX32N100Q3	Power MOSFET
IXFX32N50Q	Power MOSFET
IXFX32N80P	Power MOSFET
IXFX32N80Q3	Power MOSFET
IXFX32N90P	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 1000 1000 ± 30 ± 40 32 75 16 1.5 V V V V A A A J 10 960 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120/4.5..27 10 6 V/ns W °C °C °C °C °C Nm/lb.in. Nm/lb.