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IXFX32N80P - Power MOSFET

Download the IXFX32N80P datasheet PDF. This datasheet also covers the IXFK32N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 270 m Ω l International standard packages l Fast recovery diode l Unclamped Inductive Switching (UIS) rated l Lo.

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Note: The manufacturer provides a single datasheet file (IXFK32N80P-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800 V = 32 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-264) TO-264 PLUS247 Maximum Ratings 800 V 800 V ±30 V ±40 V 32 A 70 A 16 A 50 mJ 2.0 J 10 V/ns TO-264 (IXFK) G DS PLUS247 (IXFX) (TAB) 830 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C 1.