IXFX32N80P - Power MOSFET

This page provides the datasheet information for the IXFX32N80P, a member of the IXFK32N80P Power MOSFET family.

Product Overview

IXYS

Part number	IXFX32N80P
Manufacturer	IXYS
File Size	153.12 KB
Description	Power MOSFET
Datasheet	IXFX32N80P Datasheet
Additional preview pages of the IXFX32N80P datasheet.

D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 270 m Ω l International standard packages l Fast recovery diode l Unclamped Inductive Switching (UIS) rated l Lo.

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Published: Dec 26, 2014 |