Datasheet4U Logo Datasheet4U.com

IXFX32N80P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800 V = 32 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-264) TO-264 PLUS247 Maximum Ratings 800 V 800 V ±30 V ±40 V 32 A 70 A 16 A 50 mJ 2.0 J 10 V/ns TO-264 (IXFK) G DS PLUS247 (IXFX) (TAB) 830 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C 1.13/10 Nm/lb.in.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 270 m Ω l International standard packages l Fast recovery diode l Unclamped Inductive Switching (UIS) rated l Lo.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXFX32N80Q3 Power MOSFET
IXFX32N100P Power MOSFET
IXFX32N100Q3 Power MOSFET
IXFX32N50Q Power MOSFET
IXFX32N90P Power MOSFET
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFX35N50 Power MOSFETs
IXFX360N10T Power MOSFET
IXFX360N15T2 Power MOSFET

IXFX32N80P Distributor