Overview: HiPerFETTM Power MOSFETs
Q-Class IXFK 32N50Q IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25
500 V 32 A 500 V 32 A RDS(on)
0.16 Ω 0.16 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C,
pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 500 V 500 V ±20 V ±30 V 32 A 120 A 32 45 1500
5 A mJ mJ V/ns 416
-55 ... + 150 150
-55 ... + 150
300
1.13/10
6 4 W
°C °C °C
°C
Nm/lb.in.
g g Test Conditions
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V 2.5 4.5 V TJ = 25°C TJ = 125°C ±100 nA
100 µA 1 mA
0.
