Full PDF Text Transcription for IXFX66N50Q2 (Reference)
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IXFX66N50Q2. For precise diagrams, and layout, please refer to the original PDF.
HiPerFETTM Power MOSFETs Q2-Class IXFK66N50Q2 IXFX66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS V...
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, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 PLUS247 Maximum Ratings 500 V 500 V ± 30 V ± 40 V 66 A 264 A 66 A 4 J 20 V/ns 735 W -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 °C °C °C °C °C Nm/lb.in. N/lb.
IXFX66N50Q2 Datasheet
