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IXFX64N60P - PolarHV HiPerFET Power MOSFET

This page provides the datasheet information for the IXFX64N60P, a member of the IXFK64N60P PolarHV HiPerFET Power MOSFET family.

Features

  • z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb. in. 10 6 g g z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS,.

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Datasheet Details

Part number IXFX64N60P
Manufacturer IXYS
File Size 137.96 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFX64N60P Datasheet
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Full PDF Text Transcription

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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 64 150 64 80 3.5 20 1040 -55 ... +150 150 -55 ...
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