IXFX64N60P Overview
Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns .. Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C...
IXFX64N60P Key Features
- easy to drive and to protect
- Gate 2
- Drain (Collector) 3
- Source (Emitter) 4
- Drain (Collector)