IXFX66N50Q2 Overview
HiPerFETTM Power MOSFETs Q2-Class IXFK66N50Q2 IXFX66N50Q2 N-Channel Enhancement Mode Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
IXFX66N50Q2 Key Features
- Double metal process for low gate resistance
- International standard packages
- Epoxy meet UL 94 V-0, flammability
- Avalanche energy and current rated
- Fast intrinsic Rectifier
- Easy to mount
- Space savings
- High power density
- ID25, Note 1
- VDSS, ID = 0.5