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HiPerFETTM Power MOSFETs Q2-Class
IXFK66N50Q2 IXFX66N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s
Mounting torque (IXFK)
Mounting force
(IXFX)
TO-264 PLUS247
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
66
A
264
A
66
A
4
J
20
V/ns
735
W
-55 ... +150 150
-55 ... +150
300 260
1.13/10
20..120 /4.5..27
10 6
°C °C °C
°C °C
Nm/lb.in.
N/lb.
IXFX66N50Q2 Datasheet
