z NPT IGBT technology z Low switching losses z Low tail current z No latch up z Short circuit capability z Positive temperature coefficient
for easy paralleling z MOS input, voltage controlled z Optional ultra fast diode z International standard package
Advantages
z Space savings z High power density power supplies z Low gate charge results in simple
drive requirement.
Full PDF Text Transcription for IXGB200N60B3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXGB200N60B3. For precise diagrams, and layout, please refer to the original PDF.
200A VCE(sat) ≤ 1.5V tfi(typ) = 183ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum lead temperature for soldering Plastic body for 10s Mounting force Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 200 A 600 A ICM = 300 A 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 W °C °C °C °C °C N/lb.
IXGB200N60B3 Datasheet
