IXGB200N60B3
Features z NPT IGBT technology z Low switching losses z Low tail current z No latch up z Short circuit capability z Positive temperature coefficient for easy paralleling z MOS input, voltage controlled z Optional ultra fast diode z International standard package
Advantages z Space savings z High power density power supplies z Low gate charge results in simple drive requirement
Applications z High Frequency Inverters z UPS and Welding z AC and DC Motor Controls z Power Supplies and Drivers for
Solenoids, Relays and Connectors z PFC Circuits z Battery Chargers
© 2008 IXYS CORPORATION, All rights reserved
DS99929A(05/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified) gfs
IC = 60A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 100A, VGE = 15V, VCE = 0.5
- VCES td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 300V, RG = 1Ω td(on) tri Eon td(off) tfi Eoff
Rth JC Rth CS
Inductive load, TJ =...
