IXGH48N60B3C1 diode equivalent, genx3 600v igbt w/ sic anti-parallel diode.
z
G
C
( TAB )
E C = Collector TAB = Collector
G = Gate E = Emitter
z z z
Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diod.
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC =.
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