IXGK120N120A3 - Ultra-Low Vsat PT IGBT

IXYS (now Littelfuse)

Key Features

z Optimized for Low Conduction Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

IXGK120N120A3 ultra-low vsat pt igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXGK120N120A3
Manufacturer	IXYS (now Littelfuse)
File Size	217.33 KB
Description	Ultra-Low Vsat PT IGBT
Datasheet	IXGK120N120A3 Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXGK120N120B3	High Speed Low Vsat PT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information GenX3TM A3-Class IGBTs Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 240 120 75 600 ICM = 240 @ 0.8 • VCES 830 -55 ... +150 A A A A A W °C 150 -55 ... +150 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.