Overview: Advance Technical Information GenX3TM 1200V IGBTs IXGK120N120B3 IXGX120N120B3 High Speed Low Vsat PT IGBTs for 3-20 kHz Switching VCES = IC90 = VCE(sat) ≤ 1200V 120A 3.0V TO-264 (IXGK) Symbol
VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA)
PC
TJ TJM Tstg TL TSOLD
Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load
TC = 25°C 200 A 120 A 120 A 370 A ICM = 240 A VCES < 1200 V 830 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C Mounting Torque ( IXGK ) Mounting Force ( IXGX ) 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VCE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 5 mA ±400 nA 2.4 3.
