IXGK120N120A3 - Ultra-Low Vsat PT IGBT

Datasheet Summary

Features

z Optimized for Low Conduction Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXGK120N120A3
Manufacturer	IXYS
File Size	217.33 KB
Description	Ultra-Low Vsat PT IGBT
Datasheet	IXGK120N120A3 Datasheet
Additional preview pages of the IXGK120N120A3 datasheet.

📁 Similar Datasheet

IXGK120N60B - IGBT (IXYS Corporation)
IXGK28N140B3H1 - 1400V IGBT (IXYS Corporation)
IXGK35N120C - HiPerFAST IGBT (IXYS Corporation)
IXGK35N120CD1 - HiPerFAST IGBT (IXYS Corporation)
IXGK50N50BU1 - HiPerFAST IGBT (IXYS Corporation)
IXGK50N60A2D1 - IGBT (IXYS Corporation)
IXGK50N60AU1 - HiPerFAST IGBT (IXYS Corporation)
IXGK50N60B - HiPerFAST IGBT (IXYS Corporation)
IXGK50N60BU1 - HiPerFAST IGBT (IXYS Corporation)
IXGK50N60C2D1 - High Speed IGBT (IXYS Corporation)

Other Datasheets by IXYS

IXGK120N120B3 - High Speed Low Vsat PT IGBT
IXGK120N60A3 - Ultra-Low Vsat PT IGBT
IXGK120N60C2 - IGBT
IXGK320N60A3 - 600V IGBT
IXGK320N60B3 - Medium-Speed Low-Vsat PT IGBT
IXGK35N120B - IGBT
IXGK35N120BD1 - IGBT
IXGK400N30A3 - 300V IGBTs

Full PDF Text Transcription

Click to expand full text

Preliminary Technical Information GenX3TM A3-Class IGBTs Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 240 120 75 600 ICM = 240 @ 0.8 • VCES 830 -55 ... +150 A A A A A W °C 150 -55 ... +150 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.

Published: Oct 23, 2019 |