Overview: Preliminary Technical Information GenX3TM A3-Class IGBTs
Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol
VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA)
PC
TJ TJM Tstg TL TSOLD
Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient 1200 1200
±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load
TC = 25°C 240 120
75 600
ICM = 240 @ 0.8 • VCES
830
-55 ... +150 A A A A A
W °C 150 -55 ... +150 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C Mounting Torque ( IXGK ) Mounting Force ( IXGX ) 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VCE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 3 mA ±400 nA 1.85 2.
