* z Silocon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z Square RBSOA z High current handling capability z 2500V electrical isolation Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Bat
IXGL200N60B3 Datasheet (217.91 KB)
IXGL200N60B3
IXYS
217.91 KB
Medium speed low vsat pt igbt.
GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGL200N60B3 VCES = 600V IC110 = 90A VCE(sat) ≤ 1.50V tfi(typ) = 183ns Symbol V.
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