IXGP16N60C2D1, IXGH16N60C2D1 Datasheet - IXYS

IXGP16N60C2D1 IGBT

HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns TO-263 AA (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load TC = 25°C 600 V 600 V ±2.

IXGP16N60C2D1 Features

* z Optimized for Low Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp B

IXGH16N60C2D1_IXYS.pdf