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IXYS

IXGR50N60C2 Datasheet Preview

IXGR50N60C2 Datasheet

HiPerFAST IGBT

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www.DataSheet4U.com
HiPerFASTTM
IGBT with Diode
IXGR 50N60C2
IXGR 50N60C2D1
C2-Class High Speed IGBTs
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.7 V
= 48 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
VISOL
TJ
TJM
Tstg
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
TC = 25°C
50/60 Hz RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
36 A
300 A
ICM = 100
A
200
2500
-55 ... +150
150
-55 ... +150
5
300
W
V
°C
°C
°C
g
°C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
650 µA
5 mA
±100 nA
TJ = 25°C
TJ = 125°C
2.7
1.8
V
V
ISOPLUS247
(IXGR)
(ISOLATED TAB)
G = Gate
C = Collector
E = Emitter
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99163(04/04)




IXYS

IXGR50N60C2 Datasheet Preview

IXGR50N60C2 Datasheet

HiPerFAST IGBT

No Preview Available !

Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 40 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 51
3700
290
50
S
pF
pF
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
138 nC
25 nC
40 nC
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0
18 ns
25 ns
115 150 ns
48 ns
0.38 0.7 mJ
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
mJ
0.62 K/W
0.15
K/W
IXGR 50N60C2
IXGR 50N60C2D1www.DataSheet4U.com
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2.1 V
1.4
8.3 A
35 ns
0.85 K/W
Note 1: Pulse test, t 300 µs, duty cycle 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344


Part Number IXGR50N60C2
Description HiPerFAST IGBT
Maker IXYS
Total Page 6 Pages
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