IXGR50N60C2
IXGR50N60C2 is HiPerFAST IGBT manufactured by IXYS.
Features
- Very high frequency IGBT and anti-parallel FRED in one package
- Square RBSOA
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- DC choppers
- AC motor speed control
- DC servo and robot drives
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 25°C TJ = 125°C 5.0 650 5 ± 100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA m A n A V V Advantages
- Space savings (two devices in one package)
- Easy to mount with 1 screw
VGE(th) ICES IGES VCE(sat)
= 250 µA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 40 A, VGE = 15 V Note 1
© 2004 IXYS All rights reserved
DS99163(04/04)
IXGR 50N60C2 .. IXGR 50N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 51 3700 290 50 138 25 40 18 Inductive load, TJ = 25°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0 Ω 25 115 150 48 0.38 18 25 1.4 170 60 0.74 0.15 S p F p F p F n C n C n C ns ns ns ns 0.7 m J ns ns m J ns ns m J 0.62 K/W K/W ISOPLUS 247 Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Rth JC Rth CK
IC = 40 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 125°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0 Ω
Reverse Diode (FRED) Symbol VF IRM t rr Rth JC Test Conditions IF = 60 A, VGE = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C 2.1 1.4 8.3 35 V A ns 0.85 K/W
IF = 60 A, VGE = 0 V, -di F/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
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