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IXGR50N60C2 - HiPerFAST IGBT

Key Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

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www.DataSheet4U.com HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Preliminary Data Sheet IXGR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC VISOL TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 50/60 Hz RMS, t = 1m Maximum Ratings 600 600 ± 20 ± 30 75 36 300 ICM = 100 200 2500 -55 ... +150 150 -55 ...